SI1926DL-T1-E3

Part Number
SI1926DL-T1-E3
Manufacturer
Vishay Siliconix
Category
Transistors
Description
MOSFET 2N-CH 60V 0.37A SC-70-6
SI1926DL-T1-E3 Specifications
RoHS No RoHS Information
EDA/CAD Models SI1926DL-T1-E3 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Vishay Siliconix
Product Line Semiconductors
Subcategory FETs, MOSFETs - Arrays
Series TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 370mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V
Power - Max 510mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6 (SOT-363)
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