STGYA120M65DF2
| Part Number | STGYA120M65DF2 |
| Manufacturer | STMicroelectronics |
| Category | Transistors |
| Description | TRENCH GATE FIELD-STOP IGBT, M S |
STGYA120M65DF2 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | STGYA120M65DF2 PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | STMicroelectronics |
| Product Line | Semiconductors |
| Subcategory | IGBTs - Single |
| Series | * |
| IGBT Type | NPT, Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 160A |
| Current - Collector Pulsed (Icm) | 360A |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 120A |
| Power - Max | 625W |
| Switching Energy | 1.8mJ (on), 4.41mJ (off) |
| Input Type | Standard |
| Gate Charge | 420nC |
| Td (on/off) @ 25°C | 66ns/185ns |
| Test Condition | 400V, 120A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | 202ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Exposed Pad |
| Supplier Device Package | MAX247™ |
Quick Inquiry
| In Stock | 931 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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