TSM1NB60SCT A3

Part Number
TSM1NB60SCT A3
Manufacturer
Taiwan Semiconductor Corporation
Category
Transistors
Description
MOSFET N-CH 600V TO92
TSM1NB60SCT A3 Specifications
RoHS No RoHS Information
EDA/CAD Models TSM1NB60SCT A3 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Taiwan Semiconductor Corporation
Product Line Semiconductors
Subcategory FETs, MOSFETs - Single
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 138pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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