| CSD18543Q3AT Texas Instruments | Transistors-FETs, MOSFETs - Single 60V N-CHANNEL NEXFET POWER MOSF - Manufacturer : Texas Instruments
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : NexFET™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 15.6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id : 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 30V
- Power Dissipation (Max) : 66W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-VSON (3.3x3.3)
- Package / Case : 8-PowerVDFN
| 49608 More on Order |
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| ZXMN6A07FTA Diodes Incorporated | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 1.2A SOT23-3 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 250mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
- Power Dissipation (Max) : 625mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-23-3
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 224371 More on Order |
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| AO3422 Alpha & Omega Semiconductor | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 2.1A SOT23 - Manufacturer : Alpha & Omega Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs : 160mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id : 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 3.3nC @ 4.5V
- Vgs (Max) : ±12V
- Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
- Power Dissipation (Max) : 1.25W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-23-3L
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 818417 More on Order |
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| CSD17573Q5B Texas Instruments | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 100A 8VSON - Manufacturer : Texas Instruments
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : NexFET™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id : 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 64nC @ 4.5V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 9000pF @ 15V
- Power Dissipation (Max) : 3.2W (Ta), 195W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-VSON-CLIP (5x6)
- Package / Case : 8-PowerTDFN
| 25345 More on Order |
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| ZXMP10A13FTA Diodes Incorporated | Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 0.6A SOT23-3 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
- Rds On (Max) @ Id, Vgs : 1Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 141pF @ 50V
- Power Dissipation (Max) : 625mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-23-3
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 414997 More on Order |
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| NTR4101PT1G ON Semiconductor | Transistors-FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A SOT-23 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 20V
- Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs : 85mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id : 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 4.5V
- Vgs (Max) : ±8V
- Input Capacitance (Ciss) (Max) @ Vds : 675pF @ 10V
- Power Dissipation (Max) : 420mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-23-3 (TO-236)
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 118533 More on Order |
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| CA/JCOP/MF4K/4B-UZ NXP | Transistors-FETs, MOSFETs - Single CA/JCOP/MF4K/4B-UZ - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 434 More on Order |
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| BUK7Y25-80E/GFX NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 80V
- Current - Continuous Drain (Id) @ 25°C : 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
- Power Dissipation (Max) : 95W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 405 More on Order |
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| BUK7Y25-80E/CX NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 80V
- Current - Continuous Drain (Id) @ 25°C : 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
- Power Dissipation (Max) : 95W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 132 More on Order |
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| BUK7Y25-60E/GFX NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 492 More on Order |
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| BUK761R7-40E/GFJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Vgs (Max) : ±20V
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 118 More on Order |
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| PSMN7R6-60XSQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 51.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 7.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 38.7nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2651pF @ 30V
- Power Dissipation (Max) : 46W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 163 More on Order |
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| BUK761R5-40EJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 1.51mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11340pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 119 More on Order |
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| PSMN8R5-108ESQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 108V 100A I2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 108V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tj)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 8.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 5512pF @ 50V
- Power Dissipation (Max) : 263W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I2PAK
- Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
| 306 More on Order |
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| PSMN3R9-60XSQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 75A TO-220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 103nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 5494pF @ 25V
- Power Dissipation (Max) : 55W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 313 More on Order |
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| BUK9C1R3-40EJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 190A (Tc)
- Rds On (Max) @ Id, Vgs : 1.3mOhm @ 90A, 5V
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK-7
- Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
| 134 More on Order |
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| BUK951R8-40EQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V TO-220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 291 More on Order |
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| PMT760EN,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V SC-73 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 950mOhm @ 800mA, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 3nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 160pF @ 80V
- Power Dissipation (Max) : 800mW (Ta), 6.2W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-223
- Package / Case : TO-261-4, TO-261AA
| 145 More on Order |
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| PMT200EN,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 1.8A SC-73 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 235mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 80V
- Power Dissipation (Max) : 800mW (Ta), 8.3W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-223
- Package / Case : TO-261-4, TO-261AA
| 232 More on Order |
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| BUK9C5R3-100EJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK-7
- Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
| 173 More on Order |
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