FETs, MOSFETs - Single

Showing 1-20 of 29,932 items.
ImagePart NumberDescriptionIn StockQuantity
CSD18543Q3AT
Texas Instruments
Transistors-FETs, MOSFETs - Single
60V N-CHANNEL NEXFET POWER MOSF
  • Manufacturer : Texas Instruments
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : NexFET™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 15.6mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id : 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 30V
  • Power Dissipation (Max) : 66W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 8-VSON (3.3x3.3)
  • Package / Case : 8-PowerVDFN
49608
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ZXMN6A07FTA
Diodes Incorporated
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 1.2A SOT23-3
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 250mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
  • Power Dissipation (Max) : 625mW (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3
  • Package / Case : TO-236-3, SC-59, SOT-23-3
224371
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AO3422
Alpha & Omega Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 2.1A SOT23
  • Manufacturer : Alpha & Omega Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs : 160mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id : 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 3.3nC @ 4.5V
  • Vgs (Max) : ±12V
  • Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
  • Power Dissipation (Max) : 1.25W (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3L
  • Package / Case : TO-236-3, SC-59, SOT-23-3
818417
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CSD17573Q5B
Texas Instruments
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 100A 8VSON
  • Manufacturer : Texas Instruments
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : NexFET™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id : 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 64nC @ 4.5V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 9000pF @ 15V
  • Power Dissipation (Max) : 3.2W (Ta), 195W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 8-VSON-CLIP (5x6)
  • Package / Case : 8-PowerTDFN
25345
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ZXMP10A13FTA
Diodes Incorporated
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 100V 0.6A SOT23-3
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
  • Rds On (Max) @ Id, Vgs : 1Ohm @ 600mA, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 141pF @ 50V
  • Power Dissipation (Max) : 625mW (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3
  • Package / Case : TO-236-3, SC-59, SOT-23-3
414997
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NTR4101PT1G
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 20V 1.8A SOT-23
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 20V
  • Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs : 85mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id : 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 4.5V
  • Vgs (Max) : ±8V
  • Input Capacitance (Ciss) (Max) @ Vds : 675pF @ 10V
  • Power Dissipation (Max) : 420mW (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3 (TO-236)
  • Package / Case : TO-236-3, SC-59, SOT-23-3
118533
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CA/JCOP/MF4K/4B-UZ
NXP
Transistors-FETs, MOSFETs - Single
CA/JCOP/MF4K/4B-UZ
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : *
434
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BUK7Y25-80E/GFX
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH LFPAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 80V
  • Current - Continuous Drain (Id) @ 25°C : 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
  • Power Dissipation (Max) : 95W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : LFPAK56, Power-SO8
  • Package / Case : SC-100, SOT-669
405
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BUK7Y25-80E/CX
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH LFPAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 80V
  • Current - Continuous Drain (Id) @ 25°C : 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
  • Power Dissipation (Max) : 95W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : LFPAK56, Power-SO8
  • Package / Case : SC-100, SOT-669
132
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BUK7Y25-60E/GFX
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH LFPAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : *
492
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BUK761R7-40E/GFJ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH D2PAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : *
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Vgs (Max) : ±20V
  • Mounting Type : Surface Mount
  • Supplier Device Package : D2PAK
  • Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
118
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PSMN7R6-60XSQ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 51.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 7.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 38.7nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 2651pF @ 30V
  • Power Dissipation (Max) : 46W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
163
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BUK761R5-40EJ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 40V 120A D2PAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.51mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 11340pF @ 25V
  • Power Dissipation (Max) : 349W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : D2PAK
  • Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
119
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PSMN8R5-108ESQ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 108V 100A I2PAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 108V
  • Current - Continuous Drain (Id) @ 25°C : 100A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 8.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 5512pF @ 50V
  • Power Dissipation (Max) : 263W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : I2PAK
  • Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
306
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PSMN3R9-60XSQ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 75A TO-220F
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 103nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 5494pF @ 25V
  • Power Dissipation (Max) : 55W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
313
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BUK9C1R3-40EJ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 40V D2PAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 190A (Tc)
  • Rds On (Max) @ Id, Vgs : 1.3mOhm @ 90A, 5V
  • Mounting Type : Surface Mount
  • Supplier Device Package : D2PAK-7
  • Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
134
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BUK951R8-40EQ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 40V TO-220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 40V
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
291
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PMT760EN,115
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V SC-73
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 950mOhm @ 800mA, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 3nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 160pF @ 80V
  • Power Dissipation (Max) : 800mW (Ta), 6.2W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-223
  • Package / Case : TO-261-4, TO-261AA
145
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PMT200EN,115
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 1.8A SC-73
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 235mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 80V
  • Power Dissipation (Max) : 800mW (Ta), 8.3W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-223
  • Package / Case : TO-261-4, TO-261AA
232
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BUK9C5R3-100EJ
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V D2PAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Mounting Type : Surface Mount
  • Supplier Device Package : D2PAK-7
  • Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
173
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