| EPC2001C EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 100V 36A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 7mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 50V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die Outline (11-Solder Bar)
- Package / Case : Die
| 102387 More on Order |
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| EPC2019 EPC | Transistors-FETs, MOSFETs - Single GAN TRANS 200V 8.5A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 50mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 100V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 11709 More on Order |
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| EPC2012C EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 200V 5A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 100mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 100V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die Outline (4-Solder Bar)
- Package / Case : Die
| 15640 More on Order |
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| EPC2016C EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 100V 18A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 16mOhm @ 11A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 50V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 380252 More on Order |
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| EPC2007C EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 100V 6A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 30mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 220pF @ 50V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die Outline (5-Solder Bar)
- Package / Case : Die
| 23228 More on Order |
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| EPC2039 EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 80V BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 80V
- Current - Continuous Drain (Id) @ 25°C : 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 25mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs : 2.4nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 40V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 184470 More on Order |
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| EPC2014C EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 40V 10A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 16mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 20V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die Outline (5-Solder Bar)
- Package / Case : Die
| 66133 More on Order |
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| EPC2037 EPC | Transistors-FETs, MOSFETs - Single GAN TRANS 100V 550MOHM BUMPED DI - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 550mOhm @ 100mA, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs : 0.12nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 14pF @ 50V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 102489 More on Order |
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| EPC2040 EPC | Transistors-FETs, MOSFETs - Single GANFET NCH 15V 3.4A DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 15V
- Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 30mOhm @ 1.5A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 0.93nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds : 105pF @ 6V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 112765 More on Order |
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| EPC2038 EPC | Transistors-FETs, MOSFETs - Single GAN TRANS 100V 2.8OHM BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 3.3Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs : 0.044nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 8.4pF @ 50V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 191355 More on Order |
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| EPC2035 EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 60V 1A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 45mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs : 1.15nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 115pF @ 30V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 8219 More on Order |
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| EPC2036 EPC | Transistors-FETs, MOSFETs - Single GANFET TRANS 100V 1A BUMPED DIE - Manufacturer : EPC
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : eGaN®
- FET Type : N-Channel
- Technology : GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 65mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id : 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs : 0.91nC @ 5V
- Vgs (Max) : +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 50V
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : Die
- Package / Case : Die
| 547671 More on Order |
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