FETs, MOSFETs - Single

Showing 29,921-29,932 of 29,932 items.
ImagePart NumberDescriptionIn StockQuantity
EPC2001C
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 100V 36A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 36A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 7mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 50V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die Outline (11-Solder Bar)
  • Package / Case : Die
102387
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EPC2019
EPC
Transistors-FETs, MOSFETs - Single
GAN TRANS 200V 8.5A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 200V
  • Current - Continuous Drain (Id) @ 25°C : 8.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 50mOhm @ 7A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 100V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
11709
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EPC2012C
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 200V 5A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 200V
  • Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 100mOhm @ 3A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 100V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die Outline (4-Solder Bar)
  • Package / Case : Die
15640
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EPC2016C
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 100V 18A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 16mOhm @ 11A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 50V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
380252
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EPC2007C
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 100V 6A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 30mOhm @ 6A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 220pF @ 50V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die Outline (5-Solder Bar)
  • Package / Case : Die
23228
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EPC2039
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 80V BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 80V
  • Current - Continuous Drain (Id) @ 25°C : 6.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 25mOhm @ 6A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs : 2.4nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 40V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
184470
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EPC2014C
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 40V 10A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 16mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 20V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die Outline (5-Solder Bar)
  • Package / Case : Die
66133
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EPC2037
EPC
Transistors-FETs, MOSFETs - Single
GAN TRANS 100V 550MOHM BUMPED DI
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 550mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs : 0.12nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 14pF @ 50V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
102489
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EPC2040
EPC
Transistors-FETs, MOSFETs - Single
GANFET NCH 15V 3.4A DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 15V
  • Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 30mOhm @ 1.5A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 0.93nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds : 105pF @ 6V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
112765
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EPC2038
EPC
Transistors-FETs, MOSFETs - Single
GAN TRANS 100V 2.8OHM BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 3.3Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs : 0.044nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 8.4pF @ 50V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
191355
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EPC2035
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 60V 1A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 45mOhm @ 1A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs : 1.15nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 115pF @ 30V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
8219
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EPC2036
EPC
Transistors-FETs, MOSFETs - Single
GANFET TRANS 100V 1A BUMPED DIE
  • Manufacturer : EPC
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : eGaN®
  • FET Type : N-Channel
  • Technology : GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 65mOhm @ 1A, 5V
  • Vgs(th) (Max) @ Id : 2.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs : 0.91nC @ 5V
  • Vgs (Max) : +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 50V
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : Die
  • Package / Case : Die
547671
More on Order
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