FETs, MOSFETs - Single

Showing 61-80 of 29,932 items.
ImagePart NumberDescriptionIn StockQuantity
BUK752R7-60E,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 120A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 2.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 158nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 11180pF @ 25V
  • Power Dissipation (Max) : 349W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
266
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BUK751R6-30E,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 120A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 11960pF @ 25V
  • Power Dissipation (Max) : 349W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
332
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BUK7514-60E,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 58A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 13mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 22.9nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 25V
  • Power Dissipation (Max) : 96W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
463
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PSMN9R5-100XS,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 44.2A TO220F
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 44.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 9.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 81.5nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 4454pF @ 50V
  • Power Dissipation (Max) : 52.6W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
348
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PSMN7R0-100XS,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 55A TO220F
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 6.8mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 121nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 6686pF @ 50V
  • Power Dissipation (Max) : 57.7W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
295
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PSMN5R6-100XS,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 61.8A TO220F
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 61.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 5.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 8061pF @ 50V
  • Power Dissipation (Max) : 60W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
206
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PSMN5R0-100XS,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 67.5A TO-220F
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 67.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 153nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 9900pF @ 50V
  • Power Dissipation (Max) : 63.8W (Tc)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
242
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PSMN016-100XS,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 32.1A TO-220F
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 32.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 16mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 46.2nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 2404pF @ 50V
  • Power Dissipation (Max) : 46.1W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
240
More on Order
PSMN013-100XS,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 35.2A TO220F
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 35.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 13.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 57.5nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 3195pF @ 50V
  • Power Dissipation (Max) : 48.4W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
148
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PMT29EN,135
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 6A SC-73
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 29mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 492pF @ 15V
  • Power Dissipation (Max) : 820mW (Ta), 8.33W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-223
  • Package / Case : TO-261-4, TO-261AA
360
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PMN35EN,115
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 5.1A 6TSOP
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 31mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 334pF @ 15V
  • Power Dissipation (Max) : 500mW (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 6-TSOP
  • Package / Case : SC-74, SOT-457
263
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BUK7Y25-40B/C,115
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 40V 35.3A LFPAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 35.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 25mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 12.1nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 693pF @ 25V
  • Power Dissipation (Max) : 59.4W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : LFPAK56, Power-SO8
  • Package / Case : SC-100, SOT-669
162
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BUK7Y08-40B/C,115
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 40V 75A LFPAK
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 36.3nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 2040pF @ 25V
  • Power Dissipation (Max) : 105W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : LFPAK56, Power-SO8
  • Package / Case : SC-100, SOT-669
329
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BUK655R0-75C,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 75V 120A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 75V
  • Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 5.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 177nC @ 10V
  • Vgs (Max) : ±16V
  • Input Capacitance (Ciss) (Max) @ Vds : 11400pF @ 25V
  • Power Dissipation (Max) : 263W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
464
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BUK654R6-55C,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 100A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 5.4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 124nC @ 10V
  • Vgs (Max) : ±16V
  • Input Capacitance (Ciss) (Max) @ Vds : 7750pF @ 25V
  • Power Dissipation (Max) : 204W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
396
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BUK654R0-75C,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 75V 120A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 75V
  • Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 4.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 234nC @ 10V
  • Vgs (Max) : ±16V
  • Input Capacitance (Ciss) (Max) @ Vds : 15450pF @ 25V
  • Power Dissipation (Max) : 306W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
479
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BUK653R7-30C,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 100A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 3.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 78nC @ 10V
  • Vgs (Max) : ±16V
  • Input Capacitance (Ciss) (Max) @ Vds : 4707pF @ 25V
  • Power Dissipation (Max) : 158W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
355
More on Order
BUK653R5-55C,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 120A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 3.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 191nC @ 10V
  • Vgs (Max) : ±16V
  • Input Capacitance (Ciss) (Max) @ Vds : 11516pF @ 25V
  • Power Dissipation (Max) : 263W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
234
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BUK653R4-40C,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 40V 100A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 3.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 125nC @ 10V
  • Vgs (Max) : ±16V
  • Input Capacitance (Ciss) (Max) @ Vds : 8020pF @ 25V
  • Power Dissipation (Max) : 204W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
125
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BUK653R2-55C,127
NXP
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 120A TO220AB
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 3.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 258nC @ 10V
  • Vgs (Max) : ±16V
  • Input Capacitance (Ciss) (Max) @ Vds : 15300pF @ 25V
  • Power Dissipation (Max) : 306W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
121
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