| BUK958R5-40E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 6.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 20.9nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 25V
- Power Dissipation (Max) : 96W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 192 More on Order |
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| BUK956R1-100E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 5.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 133nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 17460pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 107 More on Order |
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| BUK954R4-80E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 80V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 80V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 4.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 123nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 17130pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 128 More on Order |
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| BUK953R2-40E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 69.5nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 9150pF @ 25V
- Power Dissipation (Max) : 234W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 140 More on Order |
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| BUK952R8-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 120nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 17450pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 336 More on Order |
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| BUK952R3-40E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 87.8nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 13160pF @ 25V
- Power Dissipation (Max) : 293W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 290 More on Order |
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| BUK951R9-40E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 1.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 120nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 16400pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 457 More on Order |
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| BUK951R6-30E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 1.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 113nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 16150pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 344 More on Order |
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| BUK9515-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 54A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 13mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 20.5nC @ 5V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 2651pF @ 25V
- Power Dissipation (Max) : 96W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 459 More on Order |
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| BUK7E4R0-80E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 80V 120A I2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 80V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 169nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 12030pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I2PAK
- Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
| 288 More on Order |
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| BUK7E1R6-30E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 120A I2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11960pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I2PAK
- Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
| 206 More on Order |
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| BUK754R7-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 100A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 4.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 82nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 6230pF @ 25V
- Power Dissipation (Max) : 234W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 216 More on Order |
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| BUK753R5-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 3.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 114nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 8920pF @ 25V
- Power Dissipation (Max) : 293W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 392 More on Order |
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| BUK752R7-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 158nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11180pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 266 More on Order |
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| BUK751R6-30E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11960pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 332 More on Order |
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| BUK7514-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 58A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 13mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 22.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 25V
- Power Dissipation (Max) : 96W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 463 More on Order |
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| PSMN9R5-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 44.2A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 44.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 9.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 81.5nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4454pF @ 50V
- Power Dissipation (Max) : 52.6W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 348 More on Order |
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| PSMN7R0-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 55A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 6.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 121nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 6686pF @ 50V
- Power Dissipation (Max) : 57.7W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 295 More on Order |
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| PSMN5R6-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 61.8A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 61.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 8061pF @ 50V
- Power Dissipation (Max) : 60W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 206 More on Order |
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| PSMN5R0-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 67.5A TO-220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 67.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 153nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 9900pF @ 50V
- Power Dissipation (Max) : 63.8W (Tc)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 242 More on Order |
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