| BUK752R7-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 158nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11180pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 266 More on Order |
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| BUK751R6-30E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11960pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 332 More on Order |
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| BUK7514-60E,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 58A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 13mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 22.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 25V
- Power Dissipation (Max) : 96W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 463 More on Order |
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| PSMN9R5-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 44.2A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 44.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 9.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 81.5nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4454pF @ 50V
- Power Dissipation (Max) : 52.6W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 348 More on Order |
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| PSMN7R0-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 55A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 6.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 121nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 6686pF @ 50V
- Power Dissipation (Max) : 57.7W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 295 More on Order |
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| PSMN5R6-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 61.8A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 61.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 8061pF @ 50V
- Power Dissipation (Max) : 60W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 206 More on Order |
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| PSMN5R0-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 67.5A TO-220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 67.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 153nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 9900pF @ 50V
- Power Dissipation (Max) : 63.8W (Tc)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 242 More on Order |
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| PSMN016-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 32.1A TO-220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 32.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 46.2nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2404pF @ 50V
- Power Dissipation (Max) : 46.1W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 240 More on Order |
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| PSMN013-100XS,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 35.2A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 35.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 13.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 57.5nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 3195pF @ 50V
- Power Dissipation (Max) : 48.4W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 148 More on Order |
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| PMT29EN,135 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 6A SC-73 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 29mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 492pF @ 15V
- Power Dissipation (Max) : 820mW (Ta), 8.33W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-223
- Package / Case : TO-261-4, TO-261AA
| 360 More on Order |
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| PMN35EN,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 5.1A 6TSOP - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 31mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 334pF @ 15V
- Power Dissipation (Max) : 500mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 6-TSOP
- Package / Case : SC-74, SOT-457
| 263 More on Order |
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| BUK7Y25-40B/C,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 35.3A LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 35.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 25mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 12.1nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 693pF @ 25V
- Power Dissipation (Max) : 59.4W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 162 More on Order |
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| BUK7Y08-40B/C,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 36.3nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2040pF @ 25V
- Power Dissipation (Max) : 105W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 329 More on Order |
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| BUK655R0-75C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 5.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 177nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 11400pF @ 25V
- Power Dissipation (Max) : 263W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 464 More on Order |
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| BUK654R6-55C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 5.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 124nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 7750pF @ 25V
- Power Dissipation (Max) : 204W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 396 More on Order |
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| BUK654R0-75C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 4.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 234nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 15450pF @ 25V
- Power Dissipation (Max) : 306W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 479 More on Order |
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| BUK653R7-30C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 100A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 78nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 4707pF @ 25V
- Power Dissipation (Max) : 158W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 355 More on Order |
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| BUK653R5-55C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 191nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 11516pF @ 25V
- Power Dissipation (Max) : 263W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 234 More on Order |
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| BUK653R4-40C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 3.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 125nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 8020pF @ 25V
- Power Dissipation (Max) : 204W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 125 More on Order |
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| BUK653R2-55C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 120A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 3.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 258nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 15300pF @ 25V
- Power Dissipation (Max) : 306W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 121 More on Order |
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