| IRF9Z34NPBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 55V 19A TO-220AB - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 100mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V
- Power Dissipation (Max) : 68W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 18756 More on Order |
|
| SI2300DS-T1-GE3 Vishay Siliconix | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 3.6A SOT-23 - Manufacturer : Vishay Siliconix
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs : 68mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id : 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
- Vgs (Max) : ±12V
- Input Capacitance (Ciss) (Max) @ Vds : 320pF @ 15V
- Power Dissipation (Max) : 1.1W (Ta), 1.7W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-23-3 (TO-236)
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 115120 More on Order |
|
| IRLL014NTRPBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 2A SOT223 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
- Rds On (Max) @ Id, Vgs : 140mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id : 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 25V
- Power Dissipation (Max) : 1W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-223
- Package / Case : TO-261-4, TO-261AA
| 43528 More on Order |
|
| IRF2807PBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 82A TO-220AB - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 13mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 3820pF @ 25V
- Power Dissipation (Max) : 230W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 2191 More on Order |
|
| IRF9540PBF Vishay Siliconix | Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 19A TO-220AB - Manufacturer : Vishay Siliconix
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 200mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 61nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
- Power Dissipation (Max) : 150W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 3850 More on Order |
|
| SI7850DP-T1-GE3 Vishay Siliconix | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 6.2A PPAK SO-8 - Manufacturer : Vishay Siliconix
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 22mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
- Vgs (Max) : ±20V
- Power Dissipation (Max) : 1.8W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : PowerPAK® SO-8
- Package / Case : PowerPAK® SO-8
| 24823 More on Order |
|
| CA/JCOP/MF4K/4B-UZ NXP | Transistors-FETs, MOSFETs - Single CA/JCOP/MF4K/4B-UZ - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 434 More on Order |
|
| BUK7Y25-80E/GFX NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 80V
- Current - Continuous Drain (Id) @ 25°C : 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
- Power Dissipation (Max) : 95W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 405 More on Order |
|
| BUK7Y25-80E/CX NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 80V
- Current - Continuous Drain (Id) @ 25°C : 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
- Power Dissipation (Max) : 95W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 132 More on Order |
|
| BUK7Y25-60E/GFX NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 492 More on Order |
|
| BUK761R7-40E/GFJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Vgs (Max) : ±20V
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 118 More on Order |
|
| PSMN7R6-60XSQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 51.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 7.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 38.7nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2651pF @ 30V
- Power Dissipation (Max) : 46W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 163 More on Order |
|
| BUK761R5-40EJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 1.51mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11340pF @ 25V
- Power Dissipation (Max) : 349W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 119 More on Order |
|
| PSMN8R5-108ESQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 108V 100A I2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 108V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tj)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 8.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 5512pF @ 50V
- Power Dissipation (Max) : 263W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I2PAK
- Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
| 306 More on Order |
|
| PSMN3R9-60XSQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 75A TO-220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 103nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 5494pF @ 25V
- Power Dissipation (Max) : 55W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 313 More on Order |
|
| BUK9C1R3-40EJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 190A (Tc)
- Rds On (Max) @ Id, Vgs : 1.3mOhm @ 90A, 5V
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK-7
- Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
| 134 More on Order |
|
| BUK951R8-40EQ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V TO-220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 291 More on Order |
|
| PMT760EN,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V SC-73 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 950mOhm @ 800mA, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 3nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 160pF @ 80V
- Power Dissipation (Max) : 800mW (Ta), 6.2W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-223
- Package / Case : TO-261-4, TO-261AA
| 145 More on Order |
|
| PMT200EN,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 1.8A SC-73 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 235mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 80V
- Power Dissipation (Max) : 800mW (Ta), 8.3W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-223
- Package / Case : TO-261-4, TO-261AA
| 232 More on Order |
|
| BUK9C5R3-100EJ NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK-7
- Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
| 173 More on Order |
|